BAE Systems produces crystals and other materials for use primarily in shifting the wavelength and frequency of laser light. We work with government research organizations, academia, and industry, both in the U.S. and internationally, to develop high-quality crystals for use in optical systems. Applications include infrared countermeasures, threat detection and targeting systems, sensor protection, infrared spectrometry, laser surgery, coherent x-ray generation, and high-power, directed-energy lasers.
Production capabilities
For more than 25 years we have refined specialized development processes in our world-class, 3,000-square-foot, bulk crystal growth facility and III-V semiconductor epitaxial growth facilities. We specialize in the following research and development areas:
Infrared optical materials
Design, produce, and characterize optical materials for operation in the infrared, enabling diverse applications ranging from basic science research to the next generation of military optical systems.
Nonlinear optical (NLO) crystals
Develop unique, world class mid-infrared NLO crystals exhibiting high gain, broad wavelength coverage, and scalability to high energies and average powers to enable new laser applications.
Crystal growth process development
Leverage a deep understanding of materials science to develop growth and fabrication processes that reliably produce high-quality crystals.
Available NLO crystals
In addition to the established NLO materials described here, we develop custom crystals to meet unique customer needs.
Zinc Germanium Phosphide (ZGP, ZnGeP2)
The nonlinear optical crystal of choice for high-energy and high-power laser frequency conversion in the 2- to 8-μm spectral range. This is the most mature crystal technology in production at BAE Systems (>25 years). Our proprietary processing offers the lowest losses, largest bulk sizes, and highest laser damage thresholds of any commercial source.
Cadmium Silicon Phosphide (CSP, CdSiP2)
A new nonlinear optical crystal for laser frequency conversion in the 1- to 8-μm spectral range. The material is particularly promising due to its high nonlinear coefficient of 84.5 pm/V, which is the largest for any new phase-matchable inorganic crystal in four decades.
Orientation Patterned Gallium Arsenide (OP-GaAs)
A quasi-phase-matched alternative for the mid-infrared. The crystal offers superior performance for continuous wave and fiber laser pumping.
Orientation Patterned Gallium Phosphide (OP-GaP)
A new quasi-phase-matched semiconductor. The material enables widely-available 1-μm and 1.5-μm lasers to be frequency-shifted deep into the mid-infrared at a dramatically higher gain than QPM oxides.
Comparison of crystals
| Property | ZGP | CSP | OP-GaAs | OPGaP |
|---|---|---|---|---|
| Nonlinear coefficient, dij [pm/V] | 75 | 84.5 | 94 | 70 |
| Transparency range [μm] | 0.72-12 | 0.50-9 | 0.5-12 | 0.57-12 |
| Thermal conductivity [w/mK] | 35 | 14 | 55 | 110 |
| Laser damage threshold [J/cm2] | ~3 | ~3 | ~3 | ~5 |
| Knoop hardness [kg/mm2] | 980 | 930 | 750 | 850 |
Other materials
In addition other, exotic crystals have been produced at BAE Systems, including:
- Cadmium Germanium Arsenide (CGA, CdGeAs2): Exhibits the highest nonlinear coefficient (236 pm/V) among known compounds.
- Silver Gallium Selenide (AgSe, AgGaSe2): Available from other suppliers but increasingly difficult to purchase, BAE Systems produced devices > 40-mm-long with record performance for frequency-doubling CO2 lasers.
- Quarternary thio- and seleno-gallates: AgGaGeS4 and AgGaGe5Se12 crystals have been grown at BAE Systems as lower-gain alternatives for 1-μm laser pumping.
- Gallium Selenide (GaSe): Available from other suppliers, this extremely soft and micaceous crystal has a high nonlinearity, broad IR transparency, and very large birefringence. BAE Systems has successfully produced Wollaston prisms using this material.
- Mixed ternary III-V semiconductors: Using our unique Hydride Vapor Phase Epitaxy (HVPE) facility, BAE Systems can produce bulk wafers of InGaAs, InGaP, InAsP, and GaInAsP with thicknesses = 1mm for applications requiring lattice constant or band-gap engineering.
Place an order
Before you order: Identify the best NLO crystal for your application using this free crystal selection software from AS-Photonics.
To order: For detailed technical information or to request a quote, contact us at crystals.dles@baesystems.com
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Overview
BAE Systems produces crystals and other materials for use primarily in shifting the wavelength and frequency of laser light. We work with government research organizations, academia, and industry, both in the U.S. and internationally, to develop high-quality crystals for use in optical systems. Applications include infrared countermeasures, threat detection and targeting systems, sensor protection, infrared spectrometry, laser surgery, coherent x-ray generation, and high-power, directed-energy lasers.
Production capabilities
For more than 25 years we have refined specialized development processes in our world-class, 3,000-square-foot, bulk crystal growth facility and III-V semiconductor epitaxial growth facilities. We specialize in the following research and development areas:Infrared optical materials
Design, produce, and characterize optical materials for operation in the infrared, enabling diverse applications ranging from basic science research to the next generation of military optical systems.Nonlinear optical (NLO) crystals
Develop unique, world class mid-infrared NLO crystals exhibiting high gain, broad wavelength coverage, and scalability to high energies and average powers to enable new laser applications.Crystal growth process development
Leverage a deep understanding of materials science to develop growth and fabrication processes that reliably produce high-quality crystals.
Available NLO crystals
In addition to the established NLO materials described here, we develop custom crystals to meet unique customer needs.Zinc Germanium Phosphide (ZGP, ZnGeP2)
The nonlinear optical crystal of choice for high-energy and high-power laser frequency conversion in the 2- to 8-μm spectral range. This is the most mature crystal technology in production at BAE Systems (>25 years). Our proprietary processing offers the lowest losses, largest bulk sizes, and highest laser damage thresholds of any commercial source.Cadmium Silicon Phosphide (CSP, CdSiP2)
A new nonlinear optical crystal for laser frequency conversion in the 1- to 8-μm spectral range. The material is particularly promising due to its high nonlinear coefficient of 84.5 pm/V, which is the largest for any new phase-matchable inorganic crystal in four decades.Orientation Patterned Gallium Arsenide (OP-GaAs)
A quasi-phase-matched alternative for the mid-infrared. The crystal offers superior performance for continuous wave and fiber laser pumping.Orientation Patterned Gallium Phosphide (OP-GaP)
A new quasi-phase-matched semiconductor. The material enables widely-available 1-μm and 1.5-μm lasers to be frequency-shifted deep into the mid-infrared at a dramatically higher gain than QPM oxides.Comparison of crystals
Property ZGP CSP OP-GaAs OPGaP Nonlinear coefficient, dij [pm/V] 75 84.5 94 70 Transparency range [μm] 0.72-12 0.50-9 0.5-12 0.57-12 Thermal conductivity [w/mK] 35 14 55 110 Laser damage threshold [J/cm2] ~3 ~3 ~3 ~5 Knoop hardness [kg/mm2] 980 930 750 850 Other materials
In addition other, exotic crystals have been produced at BAE Systems, including:- Cadmium Germanium Arsenide (CGA, CdGeAs2): Exhibits the highest nonlinear coefficient (236 pm/V) among known compounds.
- Silver Gallium Selenide (AgSe, AgGaSe2): Available from other suppliers but increasingly difficult to purchase, BAE Systems produced devices > 40-mm-long with record performance for frequency-doubling CO2 lasers.
- Quarternary thio- and seleno-gallates: AgGaGeS4 and AgGaGe5Se12 crystals have been grown at BAE Systems as lower-gain alternatives for 1-μm laser pumping.
- Gallium Selenide (GaSe): Available from other suppliers, this extremely soft and micaceous crystal has a high nonlinearity, broad IR transparency, and very large birefringence. BAE Systems has successfully produced Wollaston prisms using this material.
- Mixed ternary III-V semiconductors: Using our unique Hydride Vapor Phase Epitaxy (HVPE) facility, BAE Systems can produce bulk wafers of InGaAs, InGaP, InAsP, and GaInAsP with thicknesses = 1mm for applications requiring lattice constant or band-gap engineering.
Place an order
Before you order: Identify the best NLO crystal for your application using this free crystal selection software from AS-Photonics.To order: For detailed technical information or to request a quote, contact us at crystals.dles@baesystems.com -
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News
-
BAE Systems introduces enhanced features for TWV640 thermal camera core
Enhanced capabilities for BAE Systems’ TWV640 thermal camera core -
BAE Systems and L3Harris deliver first EC-37B Compass Call aircraft to the U.S. Air Force
Delivering critical EW capability to keep the U.S. at the vanguard for defense and deterrence -
BAE Systems successfully flight tests next-generation vehicle management computer for the F-35 Lightning II
Flight control technology upgrade maximizes processing power for added mission capabilities and safety enhancements -
BAE Systems to develop technology for next-generation sensing, imaging, and communications systems
DARPA has awarded BAE Systems a $14 million contract for the Massive Cross Correlation (MAX) program. -
Providing electric drive systems for Toronto’s newest battery-electric buses
Gen3 power management technology will deliver clean, efficient, and reliable operation for zero-emission fleet -
Delivering next-generation digital Identification Friend or Foe interrogator for the U.S. Navy
Modernized design provides advanced capabilities to support mission success -
BAE Systems unveils NavGuide™ GPS receiver
Drop-in Defense Advanced GPS Receiver replacement features M-Code protection and full-color graphical user interface -
BAE Systems to power North America’s largest battery-electric bus order with zero-emission propulsion systems
Power management technology enables clean, efficient operation for zero-emission buses -
BAE Systems to develop autonomous space-based surveillance technology
New technology will radically improve and increase continuous target tracking
-
Recent patents
- 9069229 – Nonlinear Optical Cadmium Silicon Phosphide Crystal for Use in Surgical Laser
- 8493649 – Method of Producing Nonlinear Optical Crystal Cadmium Silicon Phosphide
- 8379296 – Nonlinear Optical Cadmium Silicon Phosphide Crystal and Producing Method and Devices Therefrom
- 6714578 – Calcium Gallium Sulphide as a High Gain Erbium Host
FAST Labs™ Advanced Technology and Defense R&D
Innovating disruptive next generation technologies to solve critical defense and intelligence problems
The FAST Labs™ R&D group of BAE Systems pushes the limits of what is possible; to create advanced technologies that give our customers the edge they need to win and our employees the chance to change the world.
Find out more