C-RAM™ – Chalcogenide Random Access Memory

The 256K x 8 and 512K x 8 radiation-hardened C-RAM™ are a high-performance random-access non-volatile memory with industry-standard functionality.

It is fabricated with BAE Systems’ radiation-hardened technology and is designed for use in systems operating in radiation environments. The C-RAM operates over the -40C to +110C temperature range and requires a single 3.3 V ±10% power supply. The C-RAM is available with CMOS-compatible I/O. Software data protection is implemented using the JEDEC-optional standard algorithm. Power consumption typically is less than 20 mW/MHz in operation. The C-RAM read operation is fully asynchronous, with an associated typical read access time of less than 70 nanoseconds and write-access time of less than 1000 nanoseconds.

BAE Systems’ enhanced bulk CMOS technology is radiation-hardened through use of advanced and proprietary design, layout, and process-hardening techniques. Chalcogenide OUM™ technology licensed from Ovonyx Inc. OUM is a trademark of Ovonyx Inc.

For further information please contact:

Tim Scott
9300 Wellington Rd
Manassas, VA 20110
Tel: +1 703-367-4615
timothy.scott@baesystems.com